Electrochemical nanoimprint lithography directly on n-type crystalline silicon (111) wafer

- The contact electrification between Pt and an n-type Si (111) wafer can induce electrochemical corrosion of the latter.
- Based on this principle, an electrochemical nanoimprint lithography method is developed.
- Electrochemical nanoimprint lithography offers the possibility of imprinting directly on semiconductors.

Here we report spontaneous redox reactions at the Pt/Si/electrolyte three-phase interface and propose an electrochemical method for nanoimprint lithography on a crystalline Si wafer that does not require thermoplastic and photocuring resists. When the Pt metallized imprint mold is compacted on the n-type Si (111) wafer, electrons will transfer from the n-type Si to Pt due to their different electron work functions. At equilibrium, the Fermi levels of the electrons in each phase become equal, resulting in an electric field and a contact potential at the Pt/Si interface. When immersed in an electrolyte solution, the potentials of the Pt/electrolyte interface and the Si/electrolyte interface are observed to shift in opposite directions. Hydrogen peroxide is spontaneously reduced on the Pt surface. Meanwhile, the electrons in Si will tunnel to Pt and the residual holes will oxidize Si along the three-phase interface. In this way, the micro-/nanostructures on the Pt metallized imprint mold are transferred to the Si wafer.

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