کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6600864 | 1423968 | 2018 | 18 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of initiation and development of local oxidation phenomena during anodizing of SiC
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
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چکیده انگلیسی
Even though anodizing has been proved to be a highly efficient oxidation approach of single crystal SiC, the oxidation mechanism is still unrevealed. In this work, the initiation and development of the local oxidation phenomenon during anodizing of SiC have been experimentally studied. Local oxidation occurred on the charge carrier-rich areas like damaged areas and doping sites. The oxidation of the damaged areas has a higher priority compared with that of doping sites during anodizing of SiC. For anodizing of damaged areas, the protrusions generated by local oxidation gathered around the damaged areas. In contrast, protrusions were randomly distributed for anodizing of doping sites.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochemistry Communications - Volume 89, April 2018, Pages 27-31
Journal: Electrochemistry Communications - Volume 89, April 2018, Pages 27-31
نویسندگان
Nian Liu, Rong Yi, Hui Deng,