Hematite photo-electrodes with multiple ultrathin SiOx interlayers towards enhanced photoelectrochemical properties

Fe2O3 photo-electrodes with multiple ultrathin SiOx interlayers were prepared by a pulsed laser deposition method. The as-prepared photo-electrode showed a high photocurrent density of 1.13 mA/cm2 at 0.6 V vs. Ag/AgCl under a simulated solar irradiation (AM 1.5, 75 mW/cm2 at 350 nm-800 nm). The enhancement of the photoelectrochemical properties should be due to the improved electron-hole migration inside the photo-electrode, which is caused by the import of multiple ultrathin SiOx interlayers.