کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6601404 | 459331 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Prediction of photovoltaic p-n device short circuit current by photoelectrochemical analysis of p-type CIGSe films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The quality control of individual semiconductor thin films during fabrication of multiple layers is important for industry and academia. The ultimate aim of this research is to predict the efficiency of p-n junction solar cells by photoelectrochemical analysis of the bare p-type semiconductor. A linear correlation between the photocurrent measured electrochemically on Cu(In,Ga)Se2 absorber layers through a Eu3Â + electrolyte junction and short circuit current and efficiency of the corresponding solid state devices is found. However, the correlation is complicated by pronounced recombination at the semiconductor/electrolyte interface, while the solid state interface behaves more ideally.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochemistry Communications - Volume 48, November 2014, Pages 99-102
Journal: Electrochemistry Communications - Volume 48, November 2014, Pages 99-102
نویسندگان
Diego Colombara, Alexandre Crossay, David Regesch, Cedric Broussillou, Thomas Goislard de Monsabert, Pierre-Philippe Grand, Phillip J. Dale,