A new approach to design wide band power amplifiers by compensating parasitic elements of transistors

This paper presents an analytical approach to compensate parasitic elements of transistors over a wide frequency band. By absorbing parasitic elements, an output matching network can be realized by a conventional real to real impedance transformer. This technique is a general procedure which is adopted to design, simulate and implement a wide band power amplifier (WPA) with commercial packaged GaN transistors. Continuous wave signal excitation in frequency band from 600 to 2800 MHz demonstrates excellent power utilization factor with output power higher than 40 dBm, drain efficiency (DE) between 56.2% and 82.6% corresponding to power added efficiency (PAE) of 52.6% to 81.6% respectively. Simple analytical design strategy with excellent performance suggests this method as a promising way to design WPAs for modern communication systems.