کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6879124 1443109 2018 14 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ultra-Low voltage-power DTMOS based full-wave rectifier
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر شبکه های کامپیوتری و ارتباطات
پیش نمایش صفحه اول مقاله
Ultra-Low voltage-power DTMOS based full-wave rectifier
چکیده انگلیسی
In this paper, dynamic threshold MOS (DTMOS) transistor based full-wave rectifier with ultra-low power consumption is presented. The proposed circuit composed of only four NMOS and seven DTMOS transistors when many rectifier circuits consist of passive circuit components such as diodes, resistors and active circuit elements. The layout occupies an active area of 24.6 µm × 65.01 µm and post-layout simulation results performed using Cadence Environment with 0.18 µm TSMC CMOS technology parameters. The rectifier circuit with ±0.2 V DC supply voltages can be operated up to approximately 500 MHz and consumes only 2.83 nW thanks to the DTMOS transistors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: AEU - International Journal of Electronics and Communications - Volume 91, July 2018, Pages 18-23
نویسندگان
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