کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7003706 | 1454934 | 2018 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A new criterion to quantify the DC and RF electrical response of an electrical contact subject to fretting wear
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
شیمی کلوئیدی و سطحی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A new criterion to quantify the DC and RF electrical response of an electrical contact subject to fretting wear A new criterion to quantify the DC and RF electrical response of an electrical contact subject to fretting wear](/preview/png/7003706.png)
چکیده انگلیسی
Microwave connectors are extensively used in numerous industrial applications, including modern means of transport such as aviation and car industries. Connectors are subjected to vibrations and micro-displacements in the contact interface which lead to fretting wear damage. The present study investigated the influence of fretting wear on the transmitted high-frequency signal. A new structure suitable for radiofrequency (RF) measurements, comprising a cross-cylinders specimen adapted on a transmission line, was designed for fretting tests. An electrical contact transmitting a radiofrequency signal was modeled by an RLC (resistor, inductor and capacitor) equivalent electrical circuit. Various coating materials were tested: tin (Sn), white bronze (WB), gold (Au) and silver (Ag). The radiofrequency signal attenuation (insertion loss) and DC electrical contact resistance (ECR) evolutions using a four wire method were measured simultaneously as a function of fretting cycles. The threshold criterion for contact damage in the radiofrequency band was defined as a 0.1â¯dB increase in signal attenuation. The corresponding DC ECR failure (i.e., NcRF=NcDC,RF) was established for a ECR threshold about ÎRRF =â¯40mΩ whatever the studied material. Hence the RF failure can be established from a simple DC analysis. SEM and EDX analyses of debris layer confirm that as for Micro Cut (MC) threshold (ÎRMC = 4 mΩ), the fretting scar at the RF failure is characterized by a quasi-elimination of noble elements (Au or Ag) and the formation of an insulating oxide debris layer. However, the transition from MC to RF failure appears to be induced by a drastic increase of the proportion of low conducting copper oxides.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Wear - Volumes 412â413, 15 October 2018, Pages 82-91
Journal: Wear - Volumes 412â413, 15 October 2018, Pages 82-91
نویسندگان
B. Benarabi, J. Laporte, B. Bayard, S. Fouvry, J. Sautel, L. Petit,