Patterning and reduction of graphene oxide using femtosecond-laser irradiation

Graphene has emerged as one of the most versatile materials ever discovered due to its extraordinary electronic, optical, thermal, and mechanical properties. However, device fabrication is a well-known challenge and requires novel fabrication methods to realize the complex integration of graphene-based devices. Here, we demonstrate direct laser writing of reduced graphene oxide using femtosecond-laser irradiation at λ = 795 nm. We perform a systematic study of the reduction process of graphene oxide to graphene by varying both the laser fluence and the pulse repetition rate. Our observations show that the reduction has both thermal and non-thermal features, and suggest that we can achieve better resolution and conductivity using kHz pulse trains than using MHz pulse trains or a continuous wave laser. Our reduced graphene oxide lines written at 10-kHz exhibit a 5 order-of-magnitude decrease in resistivity compared to a non-irradiated control sample. This study provides new insight into the reduction process of graphene oxide and opens doors to achieving a high degree of flexibility and control in the fabrication of graphene layers.