کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7129118 | 1461597 | 2018 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Design and fabrication of two kind of SOI-based EA-type VOAs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
SOI-based variable optical attenuators based on electro-absorption mechanism are demonstrated in this paper. Two different doping structures are adopted to realize the attenuation: a structure with a single lateral p-i-n diode and a structure with several lateral p-i-n diodes connected in series. The VOAs with lateral p-i-n diodes connected in series (series VOA) can greatly improve the device attenuation efficiency compared to VOAs with a single lateral p-i-n diode structure (single VOA), which is verified by the experimental results that the attenuation efficiency of the series VOA and the single VOA is 3.76â¯dB/mA and 0.189â¯dB/mA respectively. The corresponding power consumption at 20â¯dB attenuation is 202â¯mW (series VOA) and 424â¯mW (single VOA) respectively. The raise time is 34.5â¯ns (single VOA) and 45.5â¯ns (series VOA), and the fall time is 37â¯ns (single VOA) and 48.5â¯ns (series VOA).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics & Laser Technology - Volume 102, June 2018, Pages 166-173
Journal: Optics & Laser Technology - Volume 102, June 2018, Pages 166-173
نویسندگان
Pei Yuan, Yue Wang, Yuanda Wu, Junming An, Xiongwei Hu,