کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7129570 1461598 2018 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Zero-bias 32 Gb/s evanescently coupled InGaAs/InP UTC-PDs
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Zero-bias 32 Gb/s evanescently coupled InGaAs/InP UTC-PDs
چکیده انگلیسی
We report the design and fabrication of high speed evanescently coupled InGaAs/InP uni-traveling-carrier-photodiodes (UTC-PDs). A self-aligned passive waveguide is integrated with the PDs by a simple fabrication procedure. Open eye diagrams at 32 Gb/s under zero bias are demonstrated for the first time, to the best of our knowledge, from evanescently or edge coupled InP based PDs, which are easier to be integrated with other optical components than surface illuminated PDs. When used for photonic integrated circuits (PICs) applications, our PDs help to lower the electrical cross talk and power consumption of PICs chips.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics & Laser Technology - Volume 101, May 2018, Pages 457-461
نویسندگان
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