کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7130849 | 1461644 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and optical properties of thermally evaporated Sb doped Ge-Se thin films
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Ge25Se75âxSbx chalcogenide thin films have been prepared by thermal vacuum evaporation technique with thickness 400Â nm on glass/Si wafer substrates. The effects of composition, thermal annealing near glass transition temperature and laser-irradiation on the optical band gap and structural properties of these thin films were investigated. The glass transition temperature of Ge25Se75âxSbx chalcogenide glass was measured by non-isothermal Differential Scanning Calorimetric measurements. The influence of Sb content in Ge25Se75âxSbx system results in a gradual decrease in indirect optical gap from 1.86 to 1.43Â eV, this behavior can be explained as increased tailing. On increasing the annealing temperature and laser-irradiation time, the optical band gap also decreases gradually for the crystallized films; this behavior can be attributed to transformation from amorphous to crystalline and was explained in the light of dangling bond model. The effect of annealing/laser irradiation on the nature and degree of crystallization has been investigated by studying the structure using X-ray diffraction and scanning electron microscope.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics & Laser Technology - Volume 54, 30 December 2013, Pages 208-213
Journal: Optics & Laser Technology - Volume 54, 30 December 2013, Pages 208-213
نویسندگان
F.A. Al-Agel,