کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7130909 | 1461644 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High power GaN-based LEDs with low optical loss electrode structure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: High power GaN-based LEDs with low optical loss electrode structure High power GaN-based LEDs with low optical loss electrode structure](/preview/png/7130909.png)
چکیده انگلیسی
GaN-based light-emitting diodes (LEDs) with discontinuous n-electrode and reflective p-electrode structure was fabricated and investigated. At 350-mA injection current, the LED with low optical loss n-electrode structure exhibited a 2.5% higher light output power than that of the LED with conventional n-electrode structure. This enhancement in light output power was attributed to the reduced loss of active region area. The LED with reflective p-electrode exhibited a 4.1% higher light output power than that of the LED with conventional p-electrode structure, which is attributed to the reduced light absorption by the opaque p-electrode. It was also found that the 350-mA forward voltage only increased slightly for the LED with discontinuous n-electrode and reflective p-electrode structure compared to the LED with conventional electrode structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics & Laser Technology - Volume 54, 30 December 2013, Pages 321-325
Journal: Optics & Laser Technology - Volume 54, 30 December 2013, Pages 321-325
نویسندگان
Shengjun Zhou, Shufang Wang, Sheng Liu, Han Ding,