کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7130977 1461644 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Sub-micron structuring of silicon using femtosecond laser interferometry
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Sub-micron structuring of silicon using femtosecond laser interferometry
چکیده انگلیسی
We report the fabrication of planar sub-micron gratings in silicon with a period of 720 nm using a modified Michelson interferometer and femtosecond laser radiation. The gratings consist of alternated stripes of laser ablated and unmodified material. Ablated stripes are bordered by parallel ridges which protrude above the unmodified material. In the regions where ridges are formed, the laser radiation intensity is not sufficient to cause ablation. Nevertheless, melting and a significant temperature increase are expected, and ridges may be formed due to expansion of silicon during resolidification or silicon oxidation. These conclusions are consistent with the evolution of the stripes morphology as a function of the distance from the center of the grating.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics & Laser Technology - Volume 54, 30 December 2013, Pages 428-431
نویسندگان
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