کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7132670 1461719 2015 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Stress evaluation of Through-Silicon Vias using micro-infrared photoelasticity and finite element analysis
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Stress evaluation of Through-Silicon Vias using micro-infrared photoelasticity and finite element analysis
چکیده انگلیسی
The Through-SiliconVias (TSV) is a key component of three dimensional electronic packaging. Obtaining its stresses is very important for evaluating its reliability. A micro-infrared photoelasticity system with a thermal loading function was built and applied to characterize the stresses of the TSV structure. Through testing it was found that the stress of each TSV is different even if their fabrication technology is exactly the same, that different TSVs obtain their stress free states at different elevated temperatures, and that their stress free states are maintained even when the temperature is further elevated. A finite element model was used to quantitatively determine the stresses of a TSV under different stress-free temperatures. Different virtual photoelasticity fringe patterns were then created based on the principle of photoelasticity and the simulated stresses. Comparing the virtual fringe patterns with the experimental pattern, an appropriate virtual photoelasticity fringe pattern and the corresponding stresses of TSV were determined
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics and Lasers in Engineering - Volume 74, November 2015, Pages 87-93
نویسندگان
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