Vertical growth of MoS2 layers by sputtering method for efficient photoelectric application

The 2D layers of MoS2 were deposited at RT, 200 °C and 400 °C over p-Si substrates using RF sputtering method. When the deposition temperature is increased beyond 200 °C, the MoS2 layers were grown in vertical direction. XRD studies revealed that the prominent peak is shifted from 2θ = 24° to 13.5° and become narrow while increasing the temperature to 400 °C. The average absorption of 53.68% was exhibited by the sample deposited at 400 °C whereas it was reduced to 28.47% for the sample prepared at 200 °C. When the MoS2/p-Si photodetector was exposed to the red color wavelength, the high photocurrent of 130 μA was produced even at zero bias. The response and recovery times were measured as 38.78 μs and 43.07 μs respectively for λ ≈ 455 nm. The detectivity was found to be in the range of 109-1010 Jones. The proposed MoS2 based photodetector is more beneficial in terms of quick transport of photogenerated carriers and fast response. The growth control and large-scale production of 2D materials would induce the enhanced photoelectric performances and practical device applications.