کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7135446 | 1461864 | 2015 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Torsion based universal MEMS logic device
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this work we demonstrate torsion based complementary MEMS logic device, which is capable, of performing INVERTER, AND, NAND, NOR, and OR gates using one physical structure within an operating range of 0-10 V. It can also perform XOR and XNOR with one access inverter using the same structure with different electrical interconnects. The paper presents modeling, fabrication and experimental calculations of various performance features of the device including lifetime, power consumption and resonance frequency. The fabricated device is 535 μm by 150 μm with a gap of 1.92 μm and a resonant frequency of 6.51 kHz. The device is capable of performing the switching operation with a frequency of 1 kHz.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 236, 1 December 2015, Pages 150-158
Journal: Sensors and Actuators A: Physical - Volume 236, 1 December 2015, Pages 150-158
نویسندگان
Saad Ilyas, Arpys Arevalo, Ernesto Bayes, Ian G. Foulds, Mohammad I. Younis,