کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7136693 | 1461880 | 2014 | 31 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High-performance infrared photo-transistor based on SWCNT decorated with PbS nanoparticles
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper presents a low-cost high-gain infrared photo-transistor based on a nano-heterostructure comprising of a single wall carbon nanotube (SWCNT) decorated with PbS nanoparticles (NPs). These structures are prepared using a solution based process with chemical bonding of PbS NPs on SWCNT walls. SWCNT act as an efficient electron transfer channel from PbS NPs to electrodes. By optimization the band alignment between PbS NPs and the SWCNTs fast transfer of electrons is achieved. Fabricated photo-transistor exhibits a relatively fast response with an enhanced sensitivity up to 35% under a laser illumination with a wavelength of 1550Â nm and a power intensity of about 2Â mW/cm2. Conversion from p-type to n-type operation is obtained by changing the polarity of the gate voltage. High gain, excellent on/off photo-current ratio and stable operation indicate potential application of SWCNT as a charge extraction strategy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 220, 1 December 2014, Pages 213-220
Journal: Sensors and Actuators A: Physical - Volume 220, 1 December 2014, Pages 213-220
نویسندگان
Mohsen Asad, Morteza Fathipour, Mohammad Hossein Sheikhi, Mahdi Pourfath,