کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7136777 1461880 2014 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Analysis on the sharpness of optical sensitivity for amorphous selenium sensors with carbon nanotubes
ترجمه فارسی عنوان
تحلیل شدت حساسیت نوری برای سنسورهای سلنیوم آمورف با نانولوله های کربنی
کلمات کلیدی
سنسور سلنیوم، نانولوله کربنی، وضوح نوری، انتشار الکترون،
موضوعات مرتبط
مهندسی و علوم پایه شیمی الکتروشیمی
چکیده انگلیسی
Amorphous selenium (a-Se) has been studied as an X-ray image detector and low-intensity light camera detector because of its superior avalanche multiplication characteristics. Various types of electron emitters are used for the a-Se photo detectors. Carbon nanotubes (CNTs) emitters are one of the promising electron emitters because of their superior electrical properties and chemical stability. CNTs grown using the resist-assisted patterning (RAP) process are suitable because the pattern size and CNTs length are easily controllable. From I-V-L measurement, the photo-induced voltage drop (ΔVph) in the a-Se layer was determined to be 30 V and 60 V under an illumination of 3.68 lx and 988 lx, respectively. Also, we defined the sharpness (S) of the photo-sensitivity as a function of applied voltage to analyze a-Se based image sensing device. Here we report on the optical switching mechanism of a-Se targets using CNTs electron emitters.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 220, 1 December 2014, Pages 237-242
نویسندگان
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