کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7137680 | 1461899 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A wide measurement pressure range CMOS-MEMS based integrated thermopile vacuum gauge with an XeF2 dry-etching process
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper reports a wide pressure measurement range CMOS-MEMS based integrated thermopile vacuum gauge with an XeF2 dry-etching process. By using XeF2 front-side dry-etching process, a small gap between the suspended heater and the substrate has been obtained, which can extend the upper pressure limit of the gauge. Meanwhile, a small size about 0.4 mm Ã 1.5 mm of the gauge structure has been obtained, and a good yield of 93% for elements in a wafer has been achieved. A cap mounted on the integrated thermopile vacuum gauge by wafer level glass frit bonding enhances the gas thermal conduction between the heater and the cap, which increases the sensitivity of the gauge and enlarges the sensing pressure range of the gauge. Moreover, a cap mounted on the gauge provides a chamber to protect the floating integrated thermopile vacuum gauge structure and a good yield of better than 90% for the packaged integrated thermopile vacuum gauge has been achieved. The constant power of 4.5 mW is applied to the device, and experimental results show the integrated thermopile vacuum gauge has a good response to the gas pressure from 5 Ã 10â3 Pa to 105 Pa.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 201, 15 October 2013, Pages 428-433
Journal: Sensors and Actuators A: Physical - Volume 201, 15 October 2013, Pages 428-433
نویسندگان
Xiao Sun, Dehui Xu, Bin Xiong, Guoqiang Wu, Yuelin Wang,