A gated single-photon avalanche diode array fabricated in a conventional CMOS process for triggered systems

► A monolithically integrated SPAD array for triggered imaging systems is presented. ► The array is operated in a gated mode with a low reverse overvoltage of 1.0 V. ► Measurements show that afterpulses are avoided and the dark count probability is reduced. ► An extended dynamic range of 15 bits is obtained with a gate on time of 10 ns. ► A photon detection efficiency of 1.4% is achieved with a low reverse overvoltage of 1.0 V.