کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7138226 1461914 2012 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A gated single-photon avalanche diode array fabricated in a conventional CMOS process for triggered systems
موضوعات مرتبط
مهندسی و علوم پایه شیمی الکتروشیمی
پیش نمایش صفحه اول مقاله
A gated single-photon avalanche diode array fabricated in a conventional CMOS process for triggered systems
چکیده انگلیسی
► A monolithically integrated SPAD array for triggered imaging systems is presented. ► The array is operated in a gated mode with a low reverse overvoltage of 1.0 V. ► Measurements show that afterpulses are avoided and the dark count probability is reduced. ► An extended dynamic range of 15 bits is obtained with a gate on time of 10 ns. ► A photon detection efficiency of 1.4% is achieved with a low reverse overvoltage of 1.0 V.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 186, October 2012, Pages 163-168
نویسندگان
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