Ion sensitive AlGaN/GaN field-effect transistors with monolithically integrated wheatstone bridge for temperature- and drift compensation in enzymatic biosensors

By application of the Wheatstone-approach for acetylcholinesterase-modified AlGaN/GaN solution-gate field-effect transistors (AcFET) as a model, we demonstrate that temperature-induced drift can be differentiated from substrate-induced signals and a substantial loss of immobilized enzymes over the course of 12 days after production can be identified.