Room temperature H2 detection based on Pd/SiNWs/p-Si Schottky diode structure

In this paper, the Schottky diode sensor composed of silicon nanowires (SiNWs) coated with palladium layers was used for room temperature H2 detection. Pd films were deposited on silicon nanowire via electroless plating. The structural and morphological properties of the Pd/SiNWs were analyzed firstly. The current-voltage (I-V) curves of Pd/SiNWs Schottky diode structure were measured. Variations of the electrical current in the presence of H2 at room temperature revealed that the diode sensors can sense H2 in a wide range of concentration of 300-3000 ppm. This novel sensor has great potential for the detection of H2 at room temperature.