Effect of microwave-assisted silanization on sensing properties of silicon nanoribbon FETs

- Microwave heating was used to optimize the silanization and passivation of the silicon oxide surface.
- It is demonstrated that a uniform APTES monolayer coating reduces the pH response of the silicon oxide-gated SiNR FET while a partial coverage of the surface leads to increased pH response.
- The APTES monolayer reduces cation adsorption to the oxide surface of the SiNR FET.