Growth mechanism of Pt modified TiO2 thick film

Platinum is widely used to modify TiO2 based gas sensing materials, and the promotion mechanism accompanied by praiseworthy results are discussed deeply. In this work, the growth mechanism of Pt dispersed on TiO2 thick film surface is discussed. The surface state of Pt is studied by XRD, XPS, SEM and Kröger-Vink defect theory in depth. Results indicate that Pt is not only dispersed on TiO2 thick film surface in metallic state but also occupy the lattice of Ti vacancy and form the oxidation state Ti1−xPtxO2. A simple model is proposed to explain the growth process of Pt and Ti1−xPtxO2.