کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7149637 | 1462117 | 2012 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Solution processed highly sensitive visible-light photodetectors based on α-Fe2O3/p-Si heterojunctions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی آنالیزی یا شیمی تجزیه
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چکیده انگلیسی
High-sensitive visible-light photodetectors based on α-Fe2O3 thin films on p-Si substrates with a responsivity as high as 2 Ã 103 A/W have been fabricated and characterized. The solution-processed devices exhibit a rapid rise/decay time (<1 ms) and a high ratio of photocurrent to dark current (â¼1.3 Ã 104) under 12.5 mW/cm2 illumination at 403 nm. The superior performances can be attributed to the interface with a suitable energy band structure of the α-Fe2O3/p-Si heterojunction and the role of fast transport channel for photogenerated holes the p-Si substrates played. A stable, reversible, and rapid photoresponse at visible wavelengths, along with the simple, low-cost, and large-scale fabrication of the photodetectors, clearly demonstrates the possibility of industrial mass-production for commercial and military applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators B: Chemical - Volume 173, October 2012, Pages 414-418
Journal: Sensors and Actuators B: Chemical - Volume 173, October 2012, Pages 414-418
نویسندگان
Tongliang Sa, Guangheng Wu, Ni Qin, Dinghua Bao,