کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7169517 1463065 2016 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fracture behavior of single crystal silicon with thermal oxide layer
ترجمه فارسی عنوان
رفتار شکستگی سیلیکون تک بلوری با لایه اکسید حرارتی
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی مکانیک
چکیده انگلیسی
This paper reports on the effect of oxidation on fracture behavior of single crystal silicon (SCS). SCS specimens were fabricated from (1 0 0) silicon-on-insulator wafer with 5-μm-thick device layer and oxide layer were thermally grown. Quasi-static tensile testing of as-fabricated, oxidized and oxidized layer removed specimens was performed. The fracture origin location transited from the surface to silicon/oxide interface and inside of silicon. The transition may be caused by surface smoothing, thickening oxide layer and formation of oxide precipitation defects in silicon during oxidation. The radius of the oxide precipitation defects was estimated, which is well agreed with the fracture-initiating crack sizes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Engineering Fracture Mechanics - Volume 163, September 2016, Pages 523-532
نویسندگان
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