کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7169798 | 1463097 | 2014 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A general methodology for calculating mixed mode stress intensity factors and fracture toughness of solder joints with interfacial cracks
ترجمه فارسی عنوان
یک روش کلی برای محاسبه فاکتورهای شدت تنش حالت ترکیبی و چقرمگی شکست اتصالات لحیم کاری با ترک های بین فاشی
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی مکانیک
چکیده انگلیسی
Solder joints in electronic packages undergo thermo-mechanical cycling, resulting in nucleation of micro-cracks, especially at the solder/bond-pad interface, which may lead to fracture of the joints. The fracture toughness of a solder joint depends on material properties, process conditions and service history, as well as strain rate and mode-mixity. This paper reports on a methodology for determining the mixed-mode fracture toughness of solder joints with an interfacial starter-crack, using a modified compact mixed mode (CMM) specimen containing an adhesive joint. Expressions for stress intensity factor (K) and strain energy release rate (G) are developed, using a combination of experiments and finite element (FE) analysis. In this methodology, crack length dependent geometry factors to convert for the modified CMM sample are first obtained via the crack-tip opening displacement (CTOD)-based linear extrapolation method to calculate the under far-field mode I and II conditions (f1a and f2a), (ii) generation of a master-plot to determine ac, and (iii) computation of K and G to analyze the fracture behavior of joints. The developed methodology was verified using J-integral calculations, and was also used to calculate experimental fracture toughness values of a few lead-free solder-Cu joints.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Engineering Fracture Mechanics - Volume 131, November 2014, Pages 9-25
Journal: Engineering Fracture Mechanics - Volume 131, November 2014, Pages 9-25
نویسندگان
Z. Huang, P. Kumar, I. Dutta, J.H.L. Pang, R. Sidhu,