کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7177658 1467048 2016 27 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Universal scaling laws for homogeneous dislocation nucleation during nano-indentation
ترجمه فارسی عنوان
قوانین پوسته شدن جهانی برای خنثی سازی یکنواختی جابجایی در هنگام نانو دندانه سازی
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی مکانیک
چکیده انگلیسی
We perform atomistic simulations to study the mechanism of homogeneous dislocation nucleation in two dimensional (2D) hexagonal crystals during nanoindentation with a circular indenter of radius R. We study both a realistic embedded atom method (EAM) potential for Al in addition to simple pair-wise potentials: Lennard-Jones, Morse, and Hookean springs. The nucleation process is governed by the vanishing of the energy associated with a single energy eigenmode. The critical eigenmode, or dislocation embryo, is found to be localized along a line (or plane in 3D) of atoms with a lateral extent, ξ, at some depth, Y⁎, below the surface. For all interatomic potentials, the scaled critical load, Fc/R, and scaled critical contact length, Cc/R, decrease to R-independent values in the limit of large R. However, ξ/R and Y⁎/R display non-trivial scaling with R despite the R independence of Fc/R and Cc/R. We show that although both the interaction potential and the orientation of the lattice affect the prefactors in the scaling relations, all the scaling laws are robust. Furthermore, we show that a stability criterion proposed by Van Vliet et al. based on the minimum eigenvalue, Λ, of the local acoustic tensor predicts the location, orientation, and polarization of the dislocation embryo with a high degree of accuracy for all potentials and crystallographic orientations. However, we also show that, for all crystallographic orientations and interaction potentials, Λ erroneously indicates instability before the true instability occurs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of the Mechanics and Physics of Solids - Volume 95, October 2016, Pages 742-754
نویسندگان
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