کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
724815 | 892433 | 2006 | 8 صفحه PDF | دانلود رایگان |
Large electrostatic discharge (ESD) protection devices close to the I/O pins, beneficial for ESD protection, have an adverse effect on the performance of broadband radio-frequency (RF) circuits for impedance mismatch and bandwidth degradation. A new proposed ESD protection structure, ππ-model distributed ESD (ππ-DESD) protection circuit, composed of one pair of ESD devices near the I/O pin, the other pair close to the core circuit, and a coplanar waveguide with under-grounded shield (CPWG) connecting these two pairs, can successfully achieve both excellent ESD robustness and good broadband RF performance. Cooperating with the active power-rail ESD clamp circuit, the experimental chip in a 0.25-μm CMOS process can sustain the human-body-model (HBM) ESD stress of 8 kV.
Journal: Journal of Electrostatics - Volume 64, Issue 2, February 2006, Pages 80–87