UV laser induced selective-area bandgap engineering for fabrication of InGaAsP/InP laser devices

• We report the superior results of UV-laser QWI technique.
• The bandgap blueshifts 142 nm without broadening of PL peak.
• The application of the UV-laser QWI for device fabrication is presented.
• We demonstrate an array of 73 nm blueshifted windows (40 µm×200 μm).
• Low threshold current and large blueshifted spectra of FP-lasers are reported.

Large bandgap blueshifts in III–V quantum semiconductor microstructures are achievable with UV-laser induced quantum well intermixing (QWI). We report on the application of the UV-laser QWI technique to investigate bandgap engineering of a compressively strained InGaAsP/InP quantum well laser microstructure. The attractive performance of the technique, determined by the ability of a laser to generate point defects, has been demonstrated with bandgap blueshifts reaching 142 nm, with enhancement of photoluminescence intensity. We have also investigated this technique for post-growth wafer level processing designed for the fabrication of laser diodes.