کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
732411 | 893244 | 2012 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Improved light extraction efficiency of GaN-based LEDs with patterned sapphire substrate and patterned ITO Improved light extraction efficiency of GaN-based LEDs with patterned sapphire substrate and patterned ITO](/preview/png/732411.png)
To improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs), periodic semisphere patterns with 3.5 μm width, 1.2 μm height, and 0.8 μm spacing were formed on sapphire substrate by dry etching using BCl3/Cl2 gas chemistry. The indium tin oxide (ITO) transparent conductive layer was patterned by wet etching to reduce the total internal reflection existing along between p-GaN, ITO, and air. At 350 mA injection current, the high power LED by integrating patterned sapphire substrate with patterned ITO technology exhibited a 36.9% higher light output power than the conventional LEDs.
► The optical power of LEDs can be enhanced 36.7% by integrating PSS and patterned ITO.
► A thermally reflowed photoresist and dry etching method was used to fabricate PSS.
► Periodic and non-periodic hexagonal patterns were transferred to ITO by aqua regia etchant.
Journal: Optics & Laser Technology - Volume 44, Issue 7, October 2012, Pages 2302–2305