1.3-μm InGaAsP planar buried heterostructure laser diodes with AlInAs electron stopper layer

► We report on the realization of 1.3-μm InGaAsP BH LDs. ► The BH LDs with an AlInAs electron stopper layer (ESL) have high modal gain (Γg0). ► The proposed BH LDs also exhibit improved device performance than the normal ones. ► The reason for that could be attributed to reduced carrier leakage by AlInAs ESL. ► The TO-can packaged BH LDs have potential for use in high-speed data communication.