کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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733021 | 893301 | 2009 | 4 صفحه PDF | دانلود رایگان |

The surface patterning of the indium tin oxide (ITO) transparent current layer has been investigated to improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs). LEDs with periodic micro-hexagon patterned ITO have been fabricated utilizing standard lithography techniques and inductively coupled plasma (ICP) technology. The luminance intensity of the LED chips with patterned ITO following 160 s ICP etching was enhanced by about 50% compared to the LED chips with unpatterned ITO. Detailed processing parameters are provided. scanning electron microscopy (SEM) and atomic force microscopy (AFM) are used to examine the micro-structures. The results indicate that the surface-patterned ITO technique could have potential applications in high-power GaN-based LEDs.
Journal: Optics & Laser Technology - Volume 41, Issue 6, September 2009, Pages 823–826