Quantum optical lithography from 1 nm resolution to pattern transfer on silicon wafer

• We recorded 1 nm lines by quantum optical lithography in two materials.
• The nanostructures were analyzed by TEM and SEM.
• A dependence beteen laser power and line width was established.
• The recorded patterns have been transfered to silicon wafer by etching process.
• The etching lines have ~5 nm width.

Many attempts have been made to break the diffraction limit, a major problem in optical lithography. Here, we report and demonstrate a lithography method, quantum optical lithography, able to attain 1 nm resolution by optical means using new materials (fluorescent photosensitive glass–ceramics and QMC-5 resist). The performance is several times better than that described for any optical or electron beam lithography (EBL) methods. The written patterns on resist were transferred to Si wafer. SEM measurements show 5 nm line widths.