کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
734685 893467 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of SiO2 additional layers on the laser induced damage threshold of Ta2O5 films
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Influence of SiO2 additional layers on the laser induced damage threshold of Ta2O5 films
چکیده انگلیسی

A series of Ta2O5 films with different SiO2 additional layers including overcoat, undercoat and interlayer was prepared by electron beam evaporation under the same deposition process. Absorption of samples was measured using the surface thermal lensing (STL) technique. The electric field distributions of the samples were theoretical predicted using thin film design software (TFCalc). The laser induced damage threshold (LIDT) was assessed using an Nd:YAG laser operating at 1064 nm with a pulse length of 12 ns. It was found that SiO2 additional layers resulted in a slight increase of the absorption, whereas they exerted little influence on the microdefects. The electric field distribution among the samples was unchanged by adding an SiO2 overcoat and undercoat, yet was changed by adding an interlayer. SiO2 undercoat. The interlayer improved the LIDT greatly, whereas the SiO2 overcoat had little effect on the LIDT.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics & Laser Technology - Volume 40, Issue 3, April 2008, Pages 545–549
نویسندگان
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