کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
735160 1461720 2015 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Line laser lock-in thermography for instantaneous imaging of cracks in semiconductor chips
ترجمه فارسی عنوان
خط لیزر قفل در ترموگرافی برای تصویربرداری لحظه ای از ترک در تراشه های نیمه هادی
کلمات کلیدی
قفل لیزر در ترموگرافی، اسکن لیزر خط. بازرسی چیپ نیمه هادی، شناسایی ترک بدون پایه، تجزیه و تحلیل شاخص دارنده
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
چکیده انگلیسی


• Line laser lock-in thermography technique for semiconductor inspection is proposed.
• Inspection is performed in complete noncontact, nondestructive and nonintrusive manners.
• The crack diagnosis can be accomplished using only current-state thermal images.
• Crack detectability is significantly enhanced by removing undesired noise components.
• Semiconductor chip cracks produced during actual fabrication processes are successfully detected.

This study proposes a new line laser lock-in thermography (LLT) technique for instantaneous inspection of surface cracks in semiconductor chips. First, a new line LLT system is developed by integrating a line scanning laser source, a high-speed infrared (IR) camera with a close-up lens, and a control computer. The proposed line LLT system scans a line laser beam onto a target semiconductor chip surface and measures the corresponding thermal wave propagation using an IR camera. A novel baseline-free crack visualization algorithm is then proposed so that heat blocking phenomena caused by crack formation can be automatically visualized and diagnosed without relying on the baseline data obtained from the pristine condition of a target semiconductor chip. The proposed inspection technique offers the following advantages over the existing semiconductor chip inspection techniques: (1) inspection is performed in a noncontact, nondestructive and nonintrusive manner; (2) the crack diagnosis can be accomplished using only current-state thermal images and thus past thermal images are unnecessary; and (3) crack detectability is significantly enhanced by achieving high spatial resolution for thermal images and removing undesired noise components from the measured thermal images. Validation tests are performed on two different types of semiconductor die chips with real micro-cracks produced during actual fabrication processes. The experiments demonstrate that the proposed line LLT technique can successfully visualize and detect semiconductor chip cracks with width of 28–54 μm.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics and Lasers in Engineering - Volume 73, October 2015, Pages 128–136
نویسندگان
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