کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
736323 | 1461913 | 2012 | 5 صفحه PDF | دانلود رایگان |
Electromechanical cantilevers comprising antiferroelectric (Pb, La) (Zr, Sn, Ti)O3 (PLZST) thin films were fabricated through bulk micro-machining process on silicon wafers, and their electromechanical properties including strain-fatigue behaviors of the antiferroelectric thin film cantilevers were investigated. The antiferroelectric cantilevers showed the distinct digital actuation characteristics with the strain generated due to the antiferroelectric–ferroelectric transformation. The maximum displacement per unit voltage around the phase switching field reached 16.7 μm/V, significantly larger than the typical piezoelectric cantilevers. Moreover, the antiferroelectric PLZST cantilevers exhibited superior strain-fatigue resistance compared to the similar piezoelectric microstructures. These results show the promising future of antiferroelectric materials in micro electromechanical systems.
Journal: Sensors and Actuators A: Physical - Volume 187, November 2012, Pages 127–131