کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
736477 | 1461852 | 2016 | 7 صفحه PDF | دانلود رایگان |
• A 1.42 μm thin layer using zam-zam water has been formed on Si substrates.
• We have used zam-zam water first time in the electronic devices.
• Better rectifying ratio was obtained according to Au/p-Si Schottky diode.
• The I–V characteristics of the Au/zam zam layer/p-Si Schottky diode strongly depend on temperature, x-ray irradiation and illumination.
In this work, a 1.42 μm thin layer using zam-zam water has been formed as a thin interlayer to modify the Schottky barrier height (SBH) between Au contacts and Si substrates. Better rectifying ratio (2.14 × 105 at ± 1 V bias) has been obtained according to Au/p-Si Schottky diode. The variations in the electrical characteristics of Au/zam-zam (ZZ) layer/p-Si Schottky diode have been investigated as a function of temperature, x-ray irradiation and illumination by using current–voltage (I–V) measurements. It has been found that the I–V characteristics of the Au/ZZ layer/p-Si Schottky diode strongly depend on temperature, x-ray irradiation and illumination. The temperature dependent of the junction parameters such as ideality factor and the barrier height has been explained by barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the interface of the junction materials. Furthermore, the I–V characteristic of the Au/ZZ layer/p-Si Schottky diode has showed a good illumination response like a solar cell.
Journal: Sensors and Actuators A: Physical - Volume 248, 1 September 2016, Pages 22–28