کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
737579 1461926 2012 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Analysis of the offset of semiconductor vertical Hall devices
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه شیمی الکتروشیمی
پیش نمایش صفحه اول مقاله
Analysis of the offset of semiconductor vertical Hall devices
چکیده انگلیسی

This study investigates the origin of the offset voltage of five-contact vertical Hall sensors (5C-VHS) by modeling these devices as a simple lumped resistor circuit. The model with the shape of a four-contact Wheatstone bridge was enhanced by asymmetries caused by the mismatch of the lumped resistors. Further, the junction field effect was taken into account by modulating the resistances of the lumped elements with the average of the voltages applied at their contacts. The linear and quadratic components of the offset versus drive voltage characteristics in four operation modes were successfully traced back to the modeled asymmetries and nonlinearities. The measured offset characteristics of 5C-VHS is satisfactorily described and methods for reducing this undesired signal component are inferred.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 174, February 2012, Pages 24–32
نویسندگان
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