Contribution of fixed oxide traps to sensitivity of pMOS dosimeters during gamma ray irradiation and annealing at room and elevated temperature

Gamma-ray irradiation and post-irradiation response at room and elevated temperature of radiation sensitive p-channel MOS transistors have been studied. The response was observed on the basis of threshold voltage shift determined from transistors transfer characteristics. These characteristics together with charge-pumping characteristics proved to be useful in providing a detailed insight into the processes that occur during gamma-ray irradiation and subsequent annealing at room temperature and later at elevated temperature. In particular, the influence of fixed oxide traps, switching oxide traps (known as slow switching traps) and switching traps at Si/SiO2Si/SiO2 interface (known as fast switching traps) on threshold voltage shift has been analyzed.