The stress effect on electrical resistivity sensitivity of FeBSiC amorphous ribbon

In this paper it was identified and determined the correlation between the stress intensity and electrical resistivity sensitivity coefficient kσ of the amorphous Fe81B13Si4C2 ribbon. Crystallization process in this alloy occurs in the temperature range from 500 °C to 540 °C. Therefore, efficient relaxation of amorphous structure was performed by annealing at 400 °C for 30 min. The annealed alloy has stable structure in temperature range from room temperature to 300 °C, exhibiting low temperature resistivity coefficient and linear dependence of resistivity upon stress.Based on experimentally obtained dependence of termoelectromotive force upon temperature and stress, we have proved that electron state density at Fermi level decreases with stress increase. This causes an increase in resistivity of the ribbon sample, and consequently results in the improvement of sensitivity coefficient kσ.

► Correlation between the stress intensity and electrical resistivity sensitivity coefficient kσ of the amorphous Fe81B13Si4C2 ribbon.
► Stable structure in temperature range from room temperature to 300 °C, exhibiting linear dependence of resistivity upon stress.
► It was proved that electron state density at Fermi level decreases with stress increase.
► Stress increase causes an increase in resistivity of the ribbon sample, and improvement of sensitivity coefficient kσ.