UV photodetection of laterally connected ZnO rods grown on porous silicon substrate

Here, the UV photodetection of ZnO rods grown on porous silicon substrates are reported. Laterally interconnected ZnO rods have been synthesized by chemical vapor transport and condensation method on porous silicon substrates. As characterized by current–voltage measurements the I–V characteristics have linear behavior, indicating space charge effect. The device exhibits photocurrent response of 0.027 A/W for 325 nm UV light under −5 V bias. The rise and decay time constants under these conditions are 19 and 62 s, respectively.

► The UV photodetection of ZnO rods grown on porous silicon substrates are reported.
► The I–V characteristics have linear behavior, indicating space charge effect.
► The device exhibits photocurrent response of 0.027 A/W for 325 nm UV light under −5 V bias.
► The rise and decay time constants under these conditions are 19 and 62 s, respectively.