کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
737886 893972 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A low cost n-SiCN/p-SiCN homojunction for high temperature and high gain ultraviolet detecting applications
موضوعات مرتبط
مهندسی و علوم پایه شیمی الکتروشیمی
پیش نمایش صفحه اول مقاله
A low cost n-SiCN/p-SiCN homojunction for high temperature and high gain ultraviolet detecting applications
چکیده انگلیسی

A novel n-SiCN/p-SiCN homojunction was developed on Si substrate for low cost and high temperature ultraviolet (UV) detecting applications. The current ratio of the junction under −5 V bias, with and without irradiation of 254 nm UV light are 1940 and 96.3, at room temperature and 175 °C, respectively. Compared to the reported UV detectors with material of 4H-SiC or β-SiC, the developed n-SiCN/p-SiCN homojunction has better current ratio in both room and elevated temperature.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 147, Issue 1, 15 September 2008, Pages 60–63
نویسندگان
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