An accurate compact model for CMOS cross-shaped Hall effect sensors

The paper describes a new design-oriented compact model for horizontal Hall effect devices. This model is based on the physics of semi-conductor and is simplified according to some assumptions verified through experimental results and/or numerical simulations. Compared to existing models, it has the advantage to take most of the first-order effects into account while allowing fast simulations. A procedure to extract the parameters of the model is given and simulation results are compared to experimental data measured on a cross-shaped sensor designed in a standard 0.35 μm CMOS technology. The maximum error between simulation results and experimental data is less than 1%.