کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
737931 | 893973 | 2011 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An accurate compact model for CMOS cross-shaped Hall effect sensors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: An accurate compact model for CMOS cross-shaped Hall effect sensors An accurate compact model for CMOS cross-shaped Hall effect sensors](/preview/png/737931.png)
چکیده انگلیسی
The paper describes a new design-oriented compact model for horizontal Hall effect devices. This model is based on the physics of semi-conductor and is simplified according to some assumptions verified through experimental results and/or numerical simulations. Compared to existing models, it has the advantage to take most of the first-order effects into account while allowing fast simulations. A procedure to extract the parameters of the model is given and simulation results are compared to experimental data measured on a cross-shaped sensor designed in a standard 0.35 μm CMOS technology. The maximum error between simulation results and experimental data is less than 1%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 171, Issue 2, November 2011, Pages 69–78
Journal: Sensors and Actuators A: Physical - Volume 171, Issue 2, November 2011, Pages 69–78
نویسندگان
M. Madec, J.B. Kammerer, L. Hébrard, C. Lallement,