کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
737980 893973 2011 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The effect of isopropyl alcohol concentration on the etching process of Si-substrates in KOH solutions
موضوعات مرتبط
مهندسی و علوم پایه شیمی الکتروشیمی
پیش نمایش صفحه اول مقاله
The effect of isopropyl alcohol concentration on the etching process of Si-substrates in KOH solutions
چکیده انگلیسی

In this paper the process of silicon anisotropic etching in KOH solutions containing isopropyl alcohol in a wide concentration range is extensively studied. Though the alcohol does not take part in the etching process itself, it strongly affects the etching results. Both etch rates and the roughness of etched surfaces depend on the alcohol concentration in the etching solution, which is connected with the adsorption phenomena on the etched surface. The surface coverage with alcohol depends on the level of saturation of the etching solution and crystallographic orientation of an etched surface. It was observed that the best morphology of (1 1 0) surface was achieved just below saturation level with IPA whereas the (1 0 0) surfaces were improving above the saturation. A model, which explains these phenomena, was proposed. Based on this model, a simple way of selection of the composition of KOH solutions with alcohol additives, assuring optimization of etching results was suggested. The method is restricted to surface tension measurements and allows one to avoid elaborated etching experiments.

The paper is an report on our experimental studies in the field of silicon anisotropic etching, which is one of key technologies in bulk micromachining. Our study concerns KOH solutions with isopropyl alcohol addition. Special attention was devoted to investigation of alcohol interaction with the etched surfaces. The mechanism responsible for the roughness of etched surface was analysed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 171, Issue 2, November 2011, Pages 436–445
نویسندگان
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