Insertion loss characteristics of passive devices fabricated on anodized aluminum oxide layers formed on Si substrates

We report on the high-frequency insertion loss behaviors of a passive device patterned on a new type of insulating layer that consists of nanoporous anodized aluminum oxide (AAO) on a Si substrate. The transmission line loss and characteristics of simple capacitors were characterized by a series of RF measurements. The insertion loss of the transmission line on the hybrid insulating layer consisting of AAO and silicon dioxide (SiO2) was smaller than that on the SiO2 single insulating layer. This hybrid insulating layer approach appears to be promising for the development of integrated passive devices that require an insertion loss of the order of −0.621 dB up to 20 GHz. A simple MIM capacitor manufactured on the hybrid insulating layer operated very well in the RF range.