Electrical properties of nickel oxide thin films for flow sensor application

In this work, Ni oxide thin films, with thermal sensitivity superior to Pt and Ni thin films, were formed through annealing of Ni films deposited by a r.f. magnetron sputtering. The annealing was carried out in the temperature range of 300–500 °C under atmospheric conditions. Resistivity of the resulting Ni oxide films were in the range of 10.5 μΩ cm/°C to 2.84 × 104 μΩ cm/°C, depending on the extent of Ni oxidation. The temperature coefficient of resistance (TCR) of the Ni oxide films also depended on the extent of Ni oxidation; the average TCR of Ni oxide resistors, measured between 0 and 150 °C, were 5630 ppm/°C for the 300 °C and 2188 ppm/°C for 500 °C films. Because of their high resistivity and very linear TCR, Ni oxide thin films are superior to pure Ni and Pt thin films for flow and temperature sensor applications.