کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
738825 | 894045 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of seed layer on the sensitivity of exchange biased planar Hall sensor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of seed layer on the sensitivity of exchange biased planar Hall sensor Effect of seed layer on the sensitivity of exchange biased planar Hall sensor](/preview/png/738825.png)
چکیده انگلیسی
We investigate systematically the effects of seed layer thickness on the sensitivity of exchange biased planar Hall sensors. The sensors consist of Ni80Fe20 (ts)/Fe50Mn50 (20Â nm)/Ni80Fe20 (20Â nm) trilayers deposited on silicon substrates by sputtering, with ts varied from 0Â nm to 50Â nm. The sensors are linear near zero-field as a result of the pinning field from the Fe50Mn50 layer. We observed that the sensitivity and range of linearity of the sensors are strongly dependent on the Ni80Fe20 seed layer thickness. The sensitivity of the sensors were also calculated by taking into account the shunting effects of the various metal layers, and the values obtained agree well with the experimental values.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 141, Issue 2, 15 February 2008, Pages 282-287
Journal: Sensors and Actuators A: Physical - Volume 141, Issue 2, 15 February 2008, Pages 282-287
نویسندگان
K.M. Chui, A.O. Adeyeye, Mo-Huang Li,