AlN as an actuation material for MEMS applications: The case of AlN driven multilayered cantilevers

This paper treats a wide range of subjects related to the use of AlN as actuation layer in MEMS, from its deposition conditions to accurate interferometric device characterization and physical parameters extraction. The case of AlN driven multilayered cantilevers has been considered. Parameters such as Young's modulus associated to the (0 0 2) orientation of the crystallites, residual thin film stresses, thermal expansion coefficient α and piezoelectric coefficient d31 have been calculated using non approximated equations able to take into account multiple film stacking. The well oriented thin films exhibit approximately the same properties as the bulk material.