کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
738926 894050 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Response time measurement in flow induced signal generation on semiconductors
موضوعات مرتبط
مهندسی و علوم پایه شیمی الکتروشیمی
پیش نمایش صفحه اول مقاله
Response time measurement in flow induced signal generation on semiconductors
چکیده انگلیسی

Measurable electrical signal is generated when a gas flows over a variety of solids, including doped semiconductors, even at the modest speed of a few meters per second. The underlying mechanism is an interesting interplay of Bernoulli's principle and the Seebeck effect. The electrical signal depends on the square of Mach number (M) and is proportional to the Seebeck coefficient (S) of the solids. Here we present experimental estimate of the response time of the signal rise and fall process, i.e. how fast the semiconductor materials respond to a steady flow as soon as it is set on or off. A theoretical model is also presented to understand the process and the dependence of the response time on the nature and physical dimensions of the semiconductor material used and they are compared with the experimental observations.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 137, Issue 2, 4 July 2007, Pages 209–212
نویسندگان
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